All MOSFET. STP4407 Datasheet

 

STP4407 Datasheet and Replacement


   Type Designator: STP4407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP-8
 

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STP4407 Datasheet (PDF)

 ..1. Size:579K  stansontech
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STP4407

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 0.1. Size:821K  stansontech
stp4407a.pdf pdf_icon

STP4407

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 8.1. Size:258K  samhop
stb440s stp440s.pdf pdf_icon

STP4407

GreenProductSTB/P440SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.8 @ VGS=10VTO-220 & TO-263 package.40V 65A11.5 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263

 8.2. Size:253K  stansontech
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STP4407

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

Datasheet: STP3NK90ZFP , STP400N4F6 , STP40N20 , STP40N60M2 , STP40N65M2 , STP40NS15 , STP413D , STP4403 , IRF540 , STP4407A , STP4435 , STP4435A , STP45N10F7 , STP45N65M5 , STP45NE06 , STP45NE06FP , STP46NF30 .

History: HFP630 | SSI4N80A

Keywords - STP4407 MOSFET datasheet

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