STP4407 MOSFET Datasheet: P-Ch, 30V, 12A. Full specification with pinout and replacement list

STP4407 Specs and Replacement

   Type Designator: STP4407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP-8

STP4407 substitution

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STP4407 datasheet

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STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no... See More ⇒

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STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

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Green Product STB/P440S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8 @ VGS=10V TO-220 & TO-263 package. 40V 65A 11.5 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263... See More ⇒

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STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n... See More ⇒

Detailed specifications: STP3NK90ZFP , STP400N4F6 , STP40N20 , STP40N60M2 , STP40N65M2 , STP40NS15 , STP413D , STP4403 , IRF540N , STP4407A , STP4435 , STP4435A , STP45N10F7 , STP45N65M5 , STP45NE06 , STP45NE06FP , STP46NF30 .