STP4407. Аналоги и основные параметры

Наименование производителя: STP4407

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 23 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 24 ns

Cossⓘ - Выходная емкость: 400 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: SOP-8

Аналог (замена) для STP4407

- подборⓘ MOSFET транзистора по параметрам

 

STP4407 даташит

 ..1. Size:579K  stansontech
 stp4407.pdf pdf_icon

STP4407

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 0.1. Size:821K  stansontech
 stp4407a.pdf pdf_icon

STP4407

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 8.1. Size:258K  samhop
 stb440s stp440s.pdf pdf_icon

STP4407

Green Product STB/P440S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8 @ VGS=10V TO-220 & TO-263 package. 40V 65A 11.5 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263

 8.2. Size:253K  stansontech
 stp4403.pdf pdf_icon

STP4407

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STP3NK90ZFP, STP400N4F6, STP40N20, STP40N60M2, STP40N65M2, STP40NS15, STP413D, STP4403, IRF540N, STP4407A, STP4435, STP4435A, STP45N10F7, STP45N65M5, STP45NE06, STP45NE06FP, STP46NF30