IXFH8N80 Datasheet. Specs and Replacement

Type Designator: IXFH8N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO247

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IXFH8N80 datasheet

 ..1. Size:204K  ixys
 ixfh8n80 ixfh9n80.pdf pdf_icon

IXFH8N80

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*... See More ⇒

 9.1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf pdf_icon

IXFH8N80

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans... See More ⇒

 9.2. Size:176K  ixys
 ixfh86n30t ixft86n30t.pdf pdf_icon

IXFH8N80

Advance Technical Information TrenchTM HiperFETTM VDSS = 300V IXFH86N30T Power MOSFET ID25 = 86A IXFT86N30T RDS(on) 43m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 300 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 300 V VGSS Continu... See More ⇒

 9.3. Size:70K  ixys
 ixfh80n20q ixfk80n20q ixft80n20q.pdf pdf_icon

IXFH8N80

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transi... See More ⇒

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Detailed specifications: IXFH75N10, IXFH75N10Q, IXFH76N07-11, IXFH76N07-12, IXFH7N80, IXFH7N90, IXFH80N10Q, IXFH80N20Q, IRLZ44N, IXFH9N80, IXFJ13N50, IXFJ32N50Q, IXFJ40N30, IXFK100N10, IXFK100N25, IXFK110N07, IXFK110N20

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