All MOSFET. STP4NB50 Datasheet

 

STP4NB50 Datasheet and Replacement


   Type Designator: STP4NB50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-220
 

 STP4NB50 substitution

   - MOSFET ⓘ Cross-Reference Search

 

STP4NB50 Datasheet (PDF)

 ..1. Size:176K  st
stp4nb50 stp4nb50fp.pdf pdf_icon

STP4NB50

STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V

 ..2. Size:129K  st
stp4nb50.pdf pdf_icon

STP4NB50

STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V

 8.1. Size:82K  st
stp4nb80-.pdf pdf_icon

STP4NB50

STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage

 8.2. Size:53K  st
stp4nb100-.pdf pdf_icon

STP4NB50

STP4NB100STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB100 1000 V

Datasheet: STP4925 , STP4931 , STP4953 , STP4953A , STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 , IRFB4115 , STP4NB80 , STP4NM60 , STP50NE08 , STP50NE10 , STP55NF03L , STP55NF06FP , STP57N65M5 , STP5N105K5 .

History: PSMN4R8-100PSE | HSP0048

Keywords - STP4NB50 MOSFET datasheet

 STP4NB50 cross reference
 STP4NB50 equivalent finder
 STP4NB50 lookup
 STP4NB50 substitution
 STP4NB50 replacement

 

 
Back to Top

 


 
.