STP4NB50 Datasheet and Replacement
Type Designator: STP4NB50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 62 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220
STP4NB50 substitution
STP4NB50 Datasheet (PDF)
stp4nb50 stp4nb50fp.pdf

STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V
stp4nb50.pdf

STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V
stp4nb80-.pdf

STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage
stp4nb100-.pdf

STP4NB100STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB100 1000 V
Datasheet: STP4925 , STP4931 , STP4953 , STP4953A , STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 , 2SK3878 , STP4NB80 , STP4NM60 , STP50NE08 , STP50NE10 , STP55NF03L , STP55NF06FP , STP57N65M5 , STP5N105K5 .
History: STP5N60M2
Keywords - STP4NB50 MOSFET datasheet
STP4NB50 cross reference
STP4NB50 equivalent finder
STP4NB50 lookup
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History: STP5N60M2



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