STP4NB50 MOSFET Datasheet: N-Ch, 500V, 3.8A. Full specification with pinout and replacement list

STP4NB50 Specs and Replacement

Type Designator: STP4NB50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-220

STP4NB50 substitution

- MOSFET ⓘ Cross-Reference Search

STP4NB50 datasheet

..1. Size:176K st
stp4nb50 stp4nb50fp.pdf pdf_icon

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V ... See More ⇒

..2. Size:129K st
stp4nb50.pdf pdf_icon

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V ... See More ⇒

8.1. Size:82K st
stp4nb80-.pdf pdf_icon

STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage ... See More ⇒

8.2. Size:53K st
stp4nb100-.pdf pdf_icon

STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V ... See More ⇒