STP4NB80 MOSFET Datasheet: N-Ch, 800V, 4A. Full specification with pinout and replacement list

STP4NB80 Specs and Replacement

Type Designator: STP4NB80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: TO-220

STP4NB80 substitution

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STP4NB80 datasheet

..1. Size:246K st
stp4nb80.pdf pdf_icon

STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY p... See More ⇒

0.1. Size:82K st
stp4nb80-.pdf pdf_icon

STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage ... See More ⇒

8.1. Size:53K st
stp4nb100-.pdf pdf_icon

STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V ... See More ⇒

8.2. Size:176K st
stp4nb50 stp4nb50fp.pdf pdf_icon

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V ... See More ⇒