STP4NB80 Datasheet and Replacement
Type Designator: STP4NB80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
STP4NB80 Datasheet (PDF)
stp4nb80.pdf
STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage MESH OVERLAYp
stp4nb80-.pdf
STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage
stp4nb100-.pdf
STP4NB100STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB100 1000 V
stp4nb50 stp4nb50fp.pdf
STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TK7P65W | CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | SFFX054Z
Keywords - STP4NB80 MOSFET datasheet
STP4NB80 cross reference
STP4NB80 equivalent finder
STP4NB80 lookup
STP4NB80 substitution
STP4NB80 replacement
History: TK7P65W | CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | SFFX054Z
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