STP4NB80 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STP4NB80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: TO-220

STP4NB80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STP4NB80 Datasheet (PDF)

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stp4nb80.pdf

STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage MESH OVERLAYp

0.1. Size:82K st
stp4nb80-.pdf

STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage

8.1. Size:53K st
stp4nb100-.pdf