STP50NE10 Specs and Replacement

Type Designator: STP50NE10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 5000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO-220

STP50NE10 substitution

- MOSFET ⓘ Cross-Reference Search

 

STP50NE10 datasheet

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 stp50ne10.pdf pdf_icon

STP50NE10

STP50NE10 N-channel 100V - 0.021 - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS(on) ID STP50NE10 100V ... See More ⇒

 0.1. Size:260K  st
 stp50ne10l.pdf pdf_icon

STP50NE10

STP50NE10L N - CHANNEL 100V - 0.020 - 50A TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP50NE10L 100 V ... See More ⇒

 0.2. Size:86K  st
 stp50ne10--.pdf pdf_icon

STP50NE10

STP50NE10 N - CHANNEL 100V - 0.021 - 50A - D2PAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP50NE10 100 V ... See More ⇒

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 stp50ne08.pdf pdf_icon

STP50NE10

STP50NE08 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP50NE08 80 V ... See More ⇒

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Detailed specifications: STP4N80K5, STP4NA90, STP4NA90FI, STP4NB100, STP4NB50, STP4NB80, STP4NM60, STP50NE08, IRF630, STP55NF03L, STP55NF06FP, STP57N65M5, STP5N105K5, STP5N120, STP5N60M2, STP5N95K5, STP5NB40

Keywords - STP50NE10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.