All MOSFET. STP50NE10 Datasheet

 

STP50NE10 Datasheet and Replacement


   Type Designator: STP50NE10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 5000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO-220
 

 STP50NE10 substitution

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STP50NE10 Datasheet (PDF)

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 stp50ne10.pdf pdf_icon

STP50NE10

STP50NE10N-channel 100V - 0.021 - 50A TO-220STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP50NE10 100V

 0.1. Size:260K  st
 stp50ne10l.pdf pdf_icon

STP50NE10

STP50NE10LN - CHANNEL 100V - 0.020 - 50A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP50NE10L 100 V

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 stp50ne10--.pdf pdf_icon

STP50NE10

STP50NE10 N - CHANNEL 100V - 0.021 - 50A - D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP50NE10 100 V

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 stp50ne08.pdf pdf_icon

STP50NE10

STP50NE08N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP50NE08 80 V

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Datasheet: STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 , STP4NB50 , STP4NB80 , STP4NM60 , STP50NE08 , 7N65 , STP55NF03L , STP55NF06FP , STP57N65M5 , STP5N105K5 , STP5N120 , STP5N60M2 , STP5N95K5 , STP5NB40 .

History: ZXMN3A03E6TC

Keywords - STP50NE10 MOSFET datasheet

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