All MOSFET. STP60NE06-16FP Datasheet

 

STP60NE06-16FP Datasheet and Replacement


   Type Designator: STP60NE06-16FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220FP
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STP60NE06-16FP Datasheet (PDF)

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STP60NE06-16FP

STP60NE06-16STP60NE06-16FPN-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP60NE06-16 60 V

 2.1. Size:397K  st
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STP60NE06-16FP

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

 2.2. Size:259K  inchange semiconductor
 stp60ne06-16.pdf pdf_icon

STP60NE06-16FP

isc N-Channel MOSFET Transistor STP60NE06-16FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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 stp60ne06l-16 stp60ne06l-16fp.pdf pdf_icon

STP60NE06-16FP

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

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Keywords - STP60NE06-16FP MOSFET datasheet

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