STP6NK60ZFP Datasheet and Replacement
Type Designator: STP6NK60ZFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220FP
STP6NK60ZFP substitution
STP6NK60ZFP Datasheet (PDF)
stb6nk60z stb6nk60z-1 stp6nk60zfp stp6nk60z.pdf

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V
stb6nk60zt4 stp6nk60zfp.pdf

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V
stp6nk60z.pdf

STP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP6NK60Z 600 V
stp6nk60z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP6NK60ZDESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications in switchingpower supplies and
Datasheet: STP6621 , STP6623 , STP6635GH , STP6N60M2 , STP6N65M2 , STP6N80K5 , STP6NB90 , STP6NC60 , STP80NF70 , STP6NK70Z , STP6NK90ZFP , STP6NM60N , STP6NS25 , STP7401 , STP7407 , STP75N20 , STP75N75F4 .
Keywords - STP6NK60ZFP MOSFET datasheet
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