STP6NK60ZFP Datasheet and Replacement
Type Designator: STP6NK60ZFP
Marking Code: P6NK60ZFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 33 nC
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220FP
STP6NK60ZFP substitution
STP6NK60ZFP Datasheet (PDF)
stb6nk60z stb6nk60z-1 stp6nk60zfp stp6nk60z.pdf

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V
stb6nk60zt4 stp6nk60zfp.pdf

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V
stp6nk60z.pdf

STP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP6NK60Z 600 V
stp6nk60z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP6NK60ZDESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications in switchingpower supplies and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SPA11N60C3
Keywords - STP6NK60ZFP MOSFET datasheet
STP6NK60ZFP cross reference
STP6NK60ZFP equivalent finder
STP6NK60ZFP lookup
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History: SPA11N60C3



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