STP6NM60N Specs and Replacement

Type Designator: STP6NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm

Package: TO-220

STP6NM60N substitution

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STP6NM60N datasheet

 ..1. Size:692K  st
stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STP6NM60N

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V ... See More ⇒

 ..2. Size:685K  st
stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STP6NM60N

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V ... See More ⇒

 9.1. Size:96K  st
stp6na60fp.pdf pdf_icon

STP6NM60N

STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP6NA60FP 600 V ... See More ⇒

 9.2. Size:532K  st
stb6nc80z stp6nc80z.pdf pdf_icon

STP6NM60N

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/D PAK/I PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V ... See More ⇒

Detailed specifications: STP6N60M2, STP6N65M2, STP6N80K5, STP6NB90, STP6NC60, STP6NK60ZFP, STP6NK70Z, STP6NK90ZFP, SI2302, STP6NS25, STP7401, STP7407, STP75N20, STP75N75F4, STP75NF75FP, STP77N6F6, STP7N105K5

Keywords - STP6NM60N MOSFET specs

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