STP7407 Specs and Replacement

Type Designator: STP7407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: SOT-323

STP7407 substitution

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STP7407 datasheet

 ..1. Size:163K  semtron
 stp7407.pdf pdf_icon

STP7407

STP7407 -20V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP7407 is the P-Channel logic -20V/-3.4A, RDS(ON) =88m (typ.)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-2.4A, RDS(ON) =110m (typ.)@VGS =-2.5V produced using high cell density. advanced trench -20V/-1.7A, RDS(ON) =150m (typ.)@VGS =-1.8V technology to provide excellen... See More ⇒

 8.1. Size:456K  stansontech
 stp7401.pdf pdf_icon

STP7407

STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not... See More ⇒

Detailed specifications: STP6NB90, STP6NC60, STP6NK60ZFP, STP6NK70Z, STP6NK90ZFP, STP6NM60N, STP6NS25, STP7401, 20N50, STP75N20, STP75N75F4, STP75NF75FP, STP77N6F6, STP7N105K5, STP7N60M2, STP7N65M2, STP7N80K5

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