All MOSFET. STP7N80K5 Datasheet

 

STP7N80K5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STP7N80K5

SMD Transistor Code: 7N80K5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.4 nC

Rise Time (tr): 8.3 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220

STP7N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STP7N80K5 Datasheet (PDF)

1.1. stp7n80k5 stu7n80k5.pdf Size:995K _upd

STP7N80K5
STP7N80K5

STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 2 3 1 STD7N80K5 DPAK STP7N80K5 800 V 1.2 Ω 6 A 110 W TAB STU7N80K5 TAB • Worldwide best FOM (figure of merit) 3 • Ultra low gate charge 2 3 1 2

5.1. stp7n65m2 stu7n65m2.pdf Size:876K _upd

STP7N80K5
STP7N80K5

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB R DS(on) Order code VDS ID max STP7N65M2 650 V 1.15 Ω 5 A 3 2 STU7N65M2 650 V 1.15 Ω 5 A TAB 1 TO-220  Extremely low gate charge 3 2  Excellent output capacitance (Coss) profile IPAK 1  100% avalanche

5.2. stp7nb60.pdf Size:276K _upd

STP7N80K5
STP7N80K5

STP7NB60 STP7NB60FP N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP7NB60 600 V < 1.2 Ω 7.2 A STP7NB60FP 600 V < 1.2 Ω 4.1 A FEATURES SUMMARY ■ TYPICAL RDS(on) = 1.0 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY 3 3 ■ 100% AVALANCHE TESTED 2 2 1 1 ■ VERY LOW INTRINSIC CAPACITANCES ■

 5.3. stp7n60m2 stu7n60m2.pdf Size:1199K _upd

STP7N80K5
STP7N80K5

STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 STD7N60M2 DPAK STP7N60M2 650 V 0.95 Ω 5 A TAB STU7N60M2 TAB • Extremely low gate charge 3 3 2 • Lower RDS(on) x area vs previous generation 2 1

5.4. stp7nk40zfp.pdf Size:431K _upd

STP7N80K5
STP7N80K5

STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V < 1 Ω 5.4 A 70 W STP7NK40ZFP 400 V < 1 Ω 5.4 A 25 W STD7NK40Z 400 V < 1 Ω 5.4 A 70 W STD7NK40Z-1 400 V < 1 Ω 5.4 A 70 W 3 TYPICAL RDS(on) = 0.85 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

 5.5. stp7n105k5 stu7n105k5.pdf Size:1031K _upd

STP7N80K5
STP7N80K5

STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 Ω typ., 4 A Zener-protected SuperMESH™ 5 Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max. ID PTOT STP7N105K5 3 2 1 STU7N105K5 1050 V 2 Ω 4 A 110 W 3 2 TO-220 1 STW7N105K5 TO-247 TAB • IPAK 1050 V worldwide best RDS(on) • Worldwide best F

5.6. stp7nm50n.pdf Size:426K _upd

STP7N80K5
STP7N80K5

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

5.7. stp7nc80z.pdf Size:542K _st

STP7N80K5
STP7N80K5

STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3? - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP7NC80Z 800 V < 1.5 ? 6.5 A STP7NC80ZFP 800 V < 1.5 ? 6.5 A STB7NC80Z 800 V < 1.5 ? 6.5 A 3 1 STB7NC80Z-1 800 V < 1.5 ? 6.5 A 3 2 D2PAK 1 TYPICAL RDS(on) = 1.3? TO-220 TO-220FP EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO -

5.8. std7n52dk3 stf7n52dk3 stp7n52dk3.pdf Size:924K _st

STP7N80K5
STP7N80K5

STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 525 V, 0.95 ?, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3 Power MOSFET Features RDS(on) Order codes VDSS max. ID Pw 3 1 STD7N52DK3 6 A 90 W DPAK STF7N52DK3 525 V < 1.15 ? 6 A (1) 25 W STP7N52DK3 6 A 90 W 1. Limited by package 100% avalanche tested 3 3 2 Extremely high dv/dt capability 2 1 1 Gate charge minimized TO-220FP TO-

5.9. stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf Size:1194K _st

STP7N80K5
STP7N80K5

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.84 ?, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 1 1 STB7N52K3 525 V < 0.98 ? 6.2 A 90 W DPAK D?PAK STD7N52K3 525 V < 0.98 ? 6.2 A 90 W STF7N52K3 525 V < 0.98 ? 6.2 A (1) 25 W STP7N52K3 525 V < 0.98 ? 6.2 A 90 W 1. Limited by package 3 100% avalanche tested

5.10. stp7ne10.pdf Size:50K _st

STP7N80K5
STP7N80K5

STP7NE10 N - CHANNEL 100V - 0.3 ? - 7A - TO-220 STripFET? POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP7NE10 100 V < 0.4 ? 7 A TYPICAL R = 0.3 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 STMicroelectronics u

5.11. stp7nk40z stp7nk40zfp std7nk40z std7nk40z-1.pdf Size:605K _st

STP7N80K5
STP7N80K5

STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 N-CHANNEL 400V-0.85?-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V < 1 ? 5.4 A 70 W STP7NK40ZFP 400 V < 1 ? 5.4 A 25 W STD7NK40Z 400 V < 1 ? 5.4 A 70 W STD7NK40Z-1 400 V < 1 ? 5.4 A 70 W 3 TYPICAL RDS(on) = 0.85 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100%

5.12. std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf Size:882K _st

STP7N80K5
STP7N80K5

STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 ?, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V < 0.9 ? 5 A STP7NM60N STU7NM60N 3 100% avalanche tested 1 3 2 1 Low input capacitance and gate charge DPAK TO-220FP Low gat

5.13. stp7nb30.pdf Size:301K _st

STP7N80K5
STP7N80K5

STP7NB30 STP7NB30FP N - CHANNEL 300V - 0.75? - 7A - TO-220/TO-220FP PowerMESH? MOSFET TYPE V R I DSS DS(on) D STP7NB30 300 V < 0.90 ? 7 A STP7NB30FP 300 V < 0.90 ? 4 A TYPICAL R = 0.75 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? p

5.14. stp7nb60.pdf Size:115K _st

STP7N80K5
STP7N80K5

STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP7NB60 600 V < 1.2 ? 7.2 A STP7NB60FP 600 V < 1.2 ? 4.1 A TYPICAL R = 1.0 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has des

5.15. stf7n95k3 stp7n95k3 stw7n95k3.pdf Size:939K _st

STP7N80K5
STP7N80K5

STF7N95K3 STP7N95K3, STW7N95K3 N-channel 950 V, 1.1 ?, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 STF7N95K3 950 V < 1.35 ? 7.2 A 35 W 2 1 STP7N95K3 950 V < 1.35 ? 7.2 A 150 W TO-247 STW7N95K3 950 V < 1.35 ? 7.2 A 150 W 3 100% avalanche tested 2 1 Extremely large avalanche performance TO-220 3 2 Gate ch

5.16. stb7nk80z stb7nk80z-1 stp7nk80zfp stp7nk80z.pdf Size:937K _st

STP7N80K5
STP7N80K5

STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 ?, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP7NK80Z 800V < 1.8? 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8? 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8? 5.2A STB7NK80Z-1 800V < 1.8? 5.2A Extremely high dv/dt capability 100% avalanche tested 3 3

5.17. std7nk30z stf7nk30z stp7nk30z.pdf Size:725K _st

STP7N80K5
STP7N80K5

STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 ?, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max STF7NK30Z 300 V < 0.9 ? 5 A 20 W 3 2 STP7NK30Z 300 V < 0.9 ? 5 A 50 W 3 1 2 1 TO-220 STD7NK30Z 300 V < 0.9 ? 5 A 50 W TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability 1 Gate charge minimized DP

5.18. std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf Size:971K _st

STP7N80K5
STP7N80K5

STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 ?, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V < 1.05 ? 6.5 A 3 3 2 2 1 1 STD7NM80-1 800 V < 1.05 ? 6.5 A TO-220FP TO-220 STF7NM80 800 V < 1.05 ? 6.5 A STP7NM80 800 V < 1.05 ? 6.5 A 100% avalanche tested 3 3 Low input capacitance and gate charge 2 1 1

5.19. stp7ne10l.pdf Size:50K _st

STP7N80K5
STP7N80K5

STP7NE10L N - CHANNEL 100V - 0.3 ? - 7A - TO-220 STripFET? POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP7NE10L 100 V < 0.4 ? 7 A TYPICAL R = 0.3 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 STMicroelectronics

5.20. stp7nc70z.pdf Size:529K _st

STP7N80K5
STP7N80K5

STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1? - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP7NC70Z/FP 700V < 1.38? 6 A STB7NC70Z/-1 700V < 1.38? 6 A 3 1 TYPICAL RDS(on) = 1.1? 3 D2PAK 2 EXTREMELY HIGH dv/dt AND CAPABILITY GATE 1 TO - SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT R

5.21. stp7nb80(fp).pdf Size:337K _st

STP7N80K5
STP7N80K5

STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2? - 6.5A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP7NB80 800 V < 1.5 ? 6.5 A STP7NB80FP 800 V < 1.5 ? 6.5 A TYPICAL R = 1.2 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? proc

5.22. stp7na60.pdf Size:395K _st

STP7N80K5
STP7N80K5

STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP7NA60 600 V < 1 ? 7.2 A STP7NA60FI 600 V < 1 ? 4.4 A TYPICAL R = 0.92 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

5.23. stp7nk80z.pdf Size:606K _st

STP7N80K5
STP7N80K5

STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL 800V - 1.5? - 5.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP7NK80Z 800 V < 1.8 ? 5.2 A 125 W STP7NK80ZFP 800 V < 1.8 ? 5.2 A 30 W STB7NK80Z 800 V < 1.8 ? 5.2 A 125 W STB7NK80Z-1 800 V < 1.8 ? 5.2 A 125 W 3 3 2 2 TYPICAL RDS(on) = 1.5 ? 1 1 TO-220 TO-220FP EXTREMELY HIGH dv/dt CA

5.24. std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf Size:424K _st

STP7N80K5
STP7N80K5

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70? - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78? 5A 2 IPAK 1 STD7NM50N-1 550V <0.78? 5A TO-220 STF7NM50N 550V <0.78? 5A (1) STP7NM50N 550V <0.78? 5A 3 1. Limited only by maximum temperature allowed 3 1 2 1

5.25. stp7nb40.pdf Size:334K _st

STP7N80K5
STP7N80K5

STP7NB40 STP7NB40FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP7NB40 400 V < 0.9 ? 7.0 A STP7NB40FP 400 V < 0.9 ? 4.4 A TYPICAL R = 0.75 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson h

5.26. stp7na40.pdf Size:408K _st

STP7N80K5
STP7N80K5

STP7NA40 STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP7NA40 400 V < 1 ? 6.5 A STP7NA40FI 400 V < 1 ? 4.1 A TYPICAL R = 0.82 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

5.27. stp7nc40.pdf Size:244K _st

STP7N80K5
STP7N80K5

STP7NC40 N-CHANNEL 400V - 0.75? - 6A TO-220 PowerMESHII MOSFET TYPE VDSS RDS(on) ID STP7NC40 400 V < 1 ? 6 A TYPICAL RDS(on) = 0.75? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 2 1 DESCRIPTION TO-220 The PowerMESHII is the evolution of the first gen- eration of MESH OVERLAY. The layout refine- ments introduced greatly improve the Ron*area figure of m

5.28. stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf Size:1317K _st

STP7N80K5
STP7N80K5

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 ?, 6 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Order codes VDSS ID Pw max. 3 3 1 1 STB7N52K3 90 W DPAK D?PAK STD7N52K3 90 W 525 V < 0.85 ? 6 A STF7N52K3 25 W STP7N52K3 90 W 100% avalanche tested 3 3 2 Extremely high dv/dt capability 2 1 1 Gate charge minimized TO-220 TO

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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