IXFK100N25 MOSFET Datasheet: N-Ch, 250V, 100A. Full specification with pinout and replacement list

IXFK100N25 Specs and Replacement

Type Designator: IXFK100N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO264

IXFK100N25 substitution

- MOSFET ⓘ Cross-Reference Search

IXFK100N25 datasheet

..1. Size:96K ixys
ixfx100n25 ixfk100n25.pdf pdf_icon

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c... See More ⇒

..2. Size:96K ixys
ixfk100n25.pdf pdf_icon

5.1. Size:112K ixys
ixfk100n20 ixfn90n20 ixfn106n20.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t... See More ⇒

6.1. Size:159K ixys
ixfk100n65x2 ixfx100n65x2.pdf pdf_icon

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK100N65X2 Power MOSFET ID25 = 100A IXFX100N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS... See More ⇒