STP80N6F6 Specs and Replacement

Type Designator: STP80N6F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-220

STP80N6F6 substitution

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STP80N6F6 datasheet

 ..1. Size:456K  st
stp80n6f6.pdf pdf_icon

STP80N6F6

STP80N6F6 Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STP80N6F6 60 V 5 m 80 A(1) 1. Current limited by package 3 Designed for automotive applications and 2 1 AEC-Q101 qualified Low gate charge TO-220 Very low on-resistance ... See More ⇒

 8.1. Size:447K  st
stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

STP80N6F6

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V ... See More ⇒

 8.2. Size:232K  st
stp80nf10fp.pdf pdf_icon

STP80N6F6

STP80NF10FP N-channel 100V - 0.012 - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID(1) STP80NF10FP 100V ... See More ⇒

 8.3. Size:353K  st
stp80nf55.pdf pdf_icon

STP80N6F6

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V ... See More ⇒

Detailed specifications: STP7N105K5, STP7N60M2, STP7N65M2, STP7N80K5, STP7NB60, STP7NK40ZFP, STP7NM50N, STP80N10F7, 7N60, STP80N70F6, STP80NE03L-06, STP80NE06-10, STP80NF03L, STP80NF03L-04, STP80NF55-06FP, STP8N80K5, STP8NK85Z

Keywords - STP80N6F6 MOSFET specs

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