STP8NK85Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP8NK85Z
Marking Code: P8NK85Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 6.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package:
TO-220
STP8NK85Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP8NK85Z
Datasheet (PDF)
..1. Size:338K st
stf8nk85z stp8nk85z stp8nk85z stf8nk85z.pdf
STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V
..2. Size:337K st
stp8nk85z stf8nk85z 2.pdf
STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V
7.1. Size:472K st
stp8nk80z.pdf
STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-CHANNEL 800V - 1.3 - 6.2A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP8NK80Z 800 V
7.2. Size:422K st
stp8nk80z stp8nk80zfp stw8nk80z.pdf
STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-channel 800V - 1.3 - 6.2A - TO-220 /TO-220FP/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP8NK80Z 800 V
7.3. Size:201K inchange semiconductor
stp8nk80zfp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP8NK80ZFPDESCRIPTIONDrain Current I =6.2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSS100% avalanche testedFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETE
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