All MOSFET. STP8NM50FP Datasheet

 

STP8NM50FP Datasheet and Replacement


   Type Designator: STP8NM50FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220FP
      - MOSFET Cross-Reference Search

 

STP8NM50FP Datasheet (PDF)

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 stp8nm50fp stp8nm50 stp8nm50fp.pdf pdf_icon

STP8NM50FP

STP8NM50STP8NM50FPN-channel 550V @ Tjmax - 0.7 - 8A - TO-220 - TO-220FPMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NM50 550V

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 std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf pdf_icon

STP8NM50FP

STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V

 6.2. Size:329K  st
 stp8nm50.pdf pdf_icon

STP8NM50FP

STP8NM50STP8NM50FPN-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FPMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP8NM50 500V

 8.1. Size:698K  st
 stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STP8NM50FP

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

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Keywords - STP8NM50FP MOSFET datasheet

 STP8NM50FP cross reference
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