STP9435 Specs and Replacement

Type Designator: STP9435

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP-8

STP9435 substitution

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STP9435 datasheet

 ..1. Size:396K  stansontech
 stp9435.pdf pdf_icon

STP9435

STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note... See More ⇒

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STP9435

STP9437 STP9437 STP9437 STP9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suite... See More ⇒

Detailed specifications: STP8NK85Z, STP8NM50FP, STP8NM60D, STP8NM60FP, STP8NM60N, STP8NS25FP, STP90N6F6, STP9235, AO4468, STP9437, STP9527, STP9547, STP95N04, STP9N60M2, STP9N65M2, STP9NK50ZFP, STP9NK60ZD

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