STP9435 Datasheet and Replacement
Type Designator: STP9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP-8
STP9435 substitution
STP9435 Datasheet (PDF)
stp9435.pdf

STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note
stp9437.pdf

STP9437STP9437STP9437STP9437P Channel Enhancement Mode MOSFET- 5.7ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP9437 is the P-Channel logic enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suite
Datasheet: STP8NK85Z , STP8NM50FP , STP8NM60D , STP8NM60FP , STP8NM60N , STP8NS25FP , STP90N6F6 , STP9235 , IRFP064N , STP9437 , STP9527 , STP9547 , STP95N04 , STP9N60M2 , STP9N65M2 , STP9NK50ZFP , STP9NK60ZD .
History: STP80NF03L
Keywords - STP9435 MOSFET datasheet
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History: STP80NF03L



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