STP9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP-8
STP9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP9435 Datasheet (PDF)
stp9435.pdf
STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note
stp9437.pdf
STP9437STP9437STP9437STP9437P Channel Enhancement Mode MOSFET- 5.7ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP9437 is the P-Channel logic enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suite
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: ZXMP6A13G | IRFW634A | 2SJ449 | 2SJ484 | 2SK1007-01
History: ZXMP6A13G | IRFW634A | 2SJ449 | 2SJ484 | 2SK1007-01
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