STRH100N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STRH100N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 48 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 135 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 679 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-254AA
STRH100N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STRH100N10 Datasheet (PDF)
strh100n10.pdf
STRH100N10Rad-Hard 100 V, 48 A N-channel Power MOSFETDatasheet - production dataFeaturesVBDSS ID RDS(on) Qg100 V 48 A 30 m 135 nC Fast switching 100% avalanche tested32 Hermetic package1TO-254AA 70 krad TID SEE radiation hardenedApplications SatelliteFigure 1. Internal schematic diagram High reliabilityD(1)DescriptionThis N-chan
strh100n6.pdf
STRH100N6Rad-Hard N-channel, 60 V, 40 A Power MOSFETDatasheet - production dataFeatures VDSS ID RDS(on) Qg60 V 40 A 12 m 134.4 nC Fast switching 100% avalanche tested32 Hermetic package1 70 krad TIDTO-254AA SEE radiation hardenedApplicationsFigure 1. Internal schematic diagram Satellite High reliabilityDescriptionThis N-channel Powe
strh12p10.pdf
STRH12P10Rad-Hard 100 V, 12 A P-channel Power MOSFETDatasheet - production dataFeaturesVDSS ID RDS(on) Qg100V 12 A 265 m 40 nC Fast switching 100% avalanche tested Hermetic package321 100 krad TIDTO-257AA SEE radiation hardenedApplications SatelliteFigure 1. Internal schematic diagram High reliabilityD (1)DescriptionThis P-channel
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
