STRH100N10 Specs and Replacement

Type Designator: STRH100N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 679 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-254AA

STRH100N10 substitution

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STRH100N10 datasheet

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 strh100n10.pdf pdf_icon

STRH100N10

STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS(on) Qg 100 V 48 A 30 m 135 nC Fast switching 100% avalanche tested 3 2 Hermetic package 1 TO-254AA 70 krad TID SEE radiation hardened Applications Satellite Figure 1. Internal schematic diagram High reliability D(1) Description This N-chan... See More ⇒

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 strh100n6.pdf pdf_icon

STRH100N10

STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS(on) Qg 60 V 40 A 12 m 134.4 nC Fast switching 100% avalanche tested 3 2 Hermetic package 1 70 krad TID TO-254AA SEE radiation hardened Applications Figure 1. Internal schematic diagram Satellite High reliability Description This N-channel Powe... See More ⇒

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 strh12p10.pdf pdf_icon

STRH100N10

STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS(on) Qg 100V 12 A 265 m 40 nC Fast switching 100% avalanche tested Hermetic package 3 2 1 100 krad TID TO-257AA SEE radiation hardened Applications Satellite Figure 1. Internal schematic diagram High reliability D (1) Description This P-channel ... See More ⇒

Detailed specifications: STQ1HN60K3-AP, STQ1NK60ZR-AP, STQ1NK80ZR-AP, STQ2LN60K3-AP, STQ3NK50ZR-AP, STR1P2UH7, STR2N2VH5, STR2P3LLH6, IRF3710, STRH100N6, STRH12P10, STRH40N6, STRH40P10, STRH8N10, STS10P3LLH6, STS10P4LLF6, STS10PF30L

Keywords - STRH100N10 MOSFET specs

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