All MOSFET. STRH100N10 Datasheet

 

STRH100N10 Datasheet and Replacement


   Type Designator: STRH100N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 679 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-254AA
 

 STRH100N10 substitution

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STRH100N10 Datasheet (PDF)

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STRH100N10

STRH100N10Rad-Hard 100 V, 48 A N-channel Power MOSFETDatasheet - production dataFeaturesVBDSS ID RDS(on) Qg100 V 48 A 30 m 135 nC Fast switching 100% avalanche tested32 Hermetic package1TO-254AA 70 krad TID SEE radiation hardenedApplications SatelliteFigure 1. Internal schematic diagram High reliabilityD(1)DescriptionThis N-chan

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 strh100n6.pdf pdf_icon

STRH100N10

STRH100N6Rad-Hard N-channel, 60 V, 40 A Power MOSFETDatasheet - production dataFeatures VDSS ID RDS(on) Qg60 V 40 A 12 m 134.4 nC Fast switching 100% avalanche tested32 Hermetic package1 70 krad TIDTO-254AA SEE radiation hardenedApplicationsFigure 1. Internal schematic diagram Satellite High reliabilityDescriptionThis N-channel Powe

 9.1. Size:457K  st
 strh12p10.pdf pdf_icon

STRH100N10

STRH12P10Rad-Hard 100 V, 12 A P-channel Power MOSFETDatasheet - production dataFeaturesVDSS ID RDS(on) Qg100V 12 A 265 m 40 nC Fast switching 100% avalanche tested Hermetic package321 100 krad TIDTO-257AA SEE radiation hardenedApplications SatelliteFigure 1. Internal schematic diagram High reliabilityD (1)DescriptionThis P-channel

Datasheet: STQ1HN60K3-AP , STQ1NK60ZR-AP , STQ1NK80ZR-AP , STQ2LN60K3-AP , STQ3NK50ZR-AP , STR1P2UH7 , STR2N2VH5 , STR2P3LLH6 , P55NF06 , STRH100N6 , STRH12P10 , STRH40N6 , STRH40P10 , STRH8N10 , STS10P3LLH6 , STS10P4LLF6 , STS10PF30L .

History: AP9926GEO-HF | UPA2780GR

Keywords - STRH100N10 MOSFET datasheet

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