STRH40N6 PDF and Equivalents Search

 

STRH40N6 Specs and Replacement

Type Designator: STRH40N6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 351 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SMD0.5

STRH40N6 substitution

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STRH40N6 datasheet

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 strh40n6.pdf pdf_icon

STRH40N6

STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS(on) Qg 60 V 30 A 36 mOhm 43 nC Fast switching 100% avalanche tested Hermetic package 70 krad TID SMD.5 SEE radiation hardened Applications Satellite Figure 1. Internal schematic diagram High reliability Description This N-channel Power MOSFET is dev... See More ⇒

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 strh40p10.pdf pdf_icon

STRH40N6

STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS(on) Qg 100 V 34 A 0.060 Ohm 162 nC Fast switching 100% avalanche tested 3 Hermetic package 2 1 100 krad TID TO-254AA SEE radiation hardened Applications Figure 1. Internal schematic diagram Satellite High reliability D (1) Description This P... See More ⇒

Detailed specifications: STQ2LN60K3-AP , STQ3NK50ZR-AP , STR1P2UH7 , STR2N2VH5 , STR2P3LLH6 , STRH100N10 , STRH100N6 , STRH12P10 , IRFB4115 , STRH40P10 , STRH8N10 , STS10P3LLH6 , STS10P4LLF6 , STS10PF30L , STS12NH3LL , STS15N4LLF3 , STS15N4LLF5 .

Keywords - STRH40N6 MOSFET specs

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