STS1HNK60 Datasheet and Replacement
Type Designator: STS1HNK60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 23.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: SO-8
STS1HNK60 substitution
STS1HNK60 Datasheet (PDF)
sts1hnk60.pdf
STS1HNK60N-CHANNEL 600V - 8 - 0.3ASO-8SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTS1HNK60 600 V
sts1hnc60.pdf
STS1HNC60N-CHANNEL 600V - 7 - 0.4A SO-8PowerMeshII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS1HNC60 600 V
Datasheet: STS10P3LLH6 , STS10P4LLF6 , STS10PF30L , STS12NH3LL , STS15N4LLF3 , STS15N4LLF5 , STS17NF3LL , STS17NH3LL , 2N7002 , STS25NH3LL , STS2DPFS20V , STS3P6F6 , STS4DNFS30 , STS4DPFS30L , STS5DP3LLH6 , STS5P3LLH6 , STS5PF20V .
History: SQ1912EEH | PSMN4R0-30YL | STP40NF20 | HFD1N60SA | OSG65R460AZF | 2SK991
Keywords - STS1HNK60 MOSFET datasheet
STS1HNK60 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SQ1912EEH | PSMN4R0-30YL | STP40NF20 | HFD1N60SA | OSG65R460AZF | 2SK991
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