All MOSFET. STS1HNK60 Datasheet

 

STS1HNK60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STS1HNK60
   Marking Code: S1HNK60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 23.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: SO-8

 STS1HNK60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS1HNK60 Datasheet (PDF)

 ..1. Size:214K  st
 sts1hnk60.pdf

STS1HNK60 STS1HNK60

STS1HNK60N-CHANNEL 600V - 8 - 0.3ASO-8SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTS1HNK60 600 V

 8.1. Size:137K  st
 sts1hnc60.pdf

STS1HNK60 STS1HNK60

STS1HNC60N-CHANNEL 600V - 7 - 0.4A SO-8PowerMeshII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS1HNC60 600 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SIA537EDJ | PMCM6501UNE | KRF7319

 

 
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