STS1HNK60 Specs and Replacement

Type Designator: STS1HNK60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 23.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: SO-8

STS1HNK60 substitution

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STS1HNK60 datasheet

 ..1. Size:214K  st
 sts1hnk60.pdf pdf_icon

STS1HNK60

STS1HNK60 N-CHANNEL 600V - 8 - 0.3ASO-8 SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STS1HNK60 600 V ... See More ⇒

 8.1. Size:137K  st
 sts1hnc60.pdf pdf_icon

STS1HNK60

STS1HNC60 N-CHANNEL 600V - 7 - 0.4A SO-8 PowerMesh II MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STS1HNC60 600 V ... See More ⇒

Detailed specifications: STS10P3LLH6, STS10P4LLF6, STS10PF30L, STS12NH3LL, STS15N4LLF3, STS15N4LLF5, STS17NF3LL, STS17NH3LL, 2N7002, STS25NH3LL, STS2DPFS20V, STS3P6F6, STS4DNFS30, STS4DPFS30L, STS5DP3LLH6, STS5P3LLH6, STS5PF20V

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.