All MOSFET. STS4DPFS30L Datasheet

 

STS4DPFS30L Datasheet and Replacement


   Type Designator: STS4DPFS30L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SO-8
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STS4DPFS30L Datasheet (PDF)

 ..1. Size:326K  st
 sts4dpfs30l.pdf pdf_icon

STS4DPFS30L

STS4DPFS30LP-CHANNEL 30V - 0.045 - 5A SO-8STripFET MOSFET PLUS SCHOTTKY RECTIFIERTable 1: General Features Figure 1: PackageMOSFET TYPE VDSS RDS(on) IDSTS4DPFS30L 30 V

 6.1. Size:259K  st
 sts4dpfs20l.pdf pdf_icon

STS4DPFS30L

STS4DPFS20LP-CHANNEL 20V - 0.07 - 4A SO-8STripFET MOSFET PLUS SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSMOSFET VDSS RDS(on) ID20 V

 6.2. Size:264K  st
 sts4dpfs2ls.pdf pdf_icon

STS4DPFS30L

STS4DPFS2LSP-CHANNEL 20V - 0.06 - 4A SO-8STripFET MOSFET PLUS SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSMOSFET VDSS RDS(on) ID20 V

 7.1. Size:252K  st
 sts4dpf20l.pdf pdf_icon

STS4DPFS30L

STS4DPF20LDUAL P-CHANNEL 20V - 0.07 - 4A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS4DPF20L 20 V

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Keywords - STS4DPFS30L MOSFET datasheet

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