STS5PF20V Specs and Replacement
Type Designator: STS5PF20V
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 179 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SO-8
STS5PF20V substitution
- MOSFET ⓘ Cross-Reference Search
STS5PF20V datasheet
sts5pf20v.pdf
STS5PF20V P-CHANNEL 20V - 0.065 - 5ASO-8 2.5V-DRIVE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID ... See More ⇒
sts5pf30l.pdf
STS5PF30L P-channel 30V - 0.045 - 5A SO-8 STripFET Power MOSFET General features Type VDSS RDS(on) ID STS5PF30L 30V ... See More ⇒
sts5p3llh6.pdf
STS5P3LLH6 P-channel 30 V, 0.048 typ., 5 A STripFET H6 DeepGATE Power MOSFET in an SO-8 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID 5 STS5P3LLH6 30 V 0.056 at 10 V 5 A 8 Very low on-resistance RDS(on) Very low gate charge High avalanche ruggedness 4 Low gate drive power loss 1 SO-8 Applications Switching applicat... See More ⇒
Detailed specifications: STS1HNK60 , STS25NH3LL , STS2DPFS20V , STS3P6F6 , STS4DNFS30 , STS4DPFS30L , STS5DP3LLH6 , STS5P3LLH6 , SPP20N60C3 , STS6P3LLH6 , STS6PF30L , STS7P4LLF6 , STS8C6H3LL , STS9NH3LL , STS9P2UH7 , STSJ100NH3LL , STSJ100NHS3LL .
Keywords - STS5PF20V MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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