All MOSFET. STS5PF20V Datasheet

 

STS5PF20V Datasheet and Replacement


   Type Designator: STS5PF20V
   Marking Code: S5PF20V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.5 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 179 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SO-8
 

 STS5PF20V substitution

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STS5PF20V Datasheet (PDF)

 ..1. Size:181K  st
 sts5pf20v.pdf pdf_icon

STS5PF20V

STS5PF20VP-CHANNEL 20V - 0.065 - 5ASO-82.5V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID

 8.1. Size:302K  st
 sts5pf30l.pdf pdf_icon

STS5PF20V

STS5PF30LP-channel 30V - 0.045 - 5A SO-8STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS5PF30L 30V

 9.1. Size:532K  st
 sts5p3llh6.pdf pdf_icon

STS5PF20V

STS5P3LLH6 P-channel 30 V, 0.048 typ., 5 A STripFET H6 DeepGATEPower MOSFET in an SO-8 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max ID5STS5P3LLH6 30 V 0.056 at 10 V 5 A8 Very low on-resistance RDS(on) Very low gate charge High avalanche ruggedness4 Low gate drive power loss1SO-8Applications Switching applicat

Datasheet: STS1HNK60 , STS25NH3LL , STS2DPFS20V , STS3P6F6 , STS4DNFS30 , STS4DPFS30L , STS5DP3LLH6 , STS5P3LLH6 , AON7410 , STS6P3LLH6 , STS6PF30L , STS7P4LLF6 , STS8C6H3LL , STS9NH3LL , STS9P2UH7 , STSJ100NH3LL , STSJ100NHS3LL .

History: AONY36302 | SVF6N60F

Keywords - STS5PF20V MOSFET datasheet

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