STS6PF30L Specs and Replacement

Type Designator: STS6PF30L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO-8

STS6PF30L substitution

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STS6PF30L datasheet

 ..1. Size:216K  st
 sts6pf30l.pdf pdf_icon

STS6PF30L

STS6PF30L P-CHANNEL 30V - 0.027 - 6A SO-8 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STS6PF30L 30 V ... See More ⇒

 9.1. Size:706K  st
 sts6p3llh6.pdf pdf_icon

STS6PF30L

STS6P3LLH6 P-channel 30 V, 0.024 typ., 6 A, STripFET VI DeepGATE Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STS6P3LLH6 30 V 0.03 6 A RDS(on)* Qg industry benchmark 4 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness SO-8 Applications Switching applications Description Figure 1. Inte... See More ⇒

Detailed specifications: STS2DPFS20V, STS3P6F6, STS4DNFS30, STS4DPFS30L, STS5DP3LLH6, STS5P3LLH6, STS5PF20V, STS6P3LLH6, K4145, STS7P4LLF6, STS8C6H3LL, STS9NH3LL, STS9P2UH7, STSJ100NH3LL, STSJ100NHS3LL, STSJ25NF3LL, STSJ50NH3LL

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