STT3P2UH7 Specs and Replacement

Type Designator: STT3P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-23

STT3P2UH7 substitution

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STT3P2UH7 datasheet

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 stt3p2uh7.pdf pdf_icon

STT3P2UH7

STT3P2UH7 P-channel 20 V, 0.087 typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description SOT23-6L This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structu... See More ⇒

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 stt3pf30l.pdf pdf_icon

STT3P2UH7

STT3PF30L P-CHANNEL 30V - 0.14 - 3A SOT23-6L STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STT3PF30L 30 V ... See More ⇒

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 stt3pf20v.pdf pdf_icon

STT3P2UH7

STT3PF20V P-CHANNEL 20V - 0.14 - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STT3PF20V TYPICAL RDS(on) = 0.14 (@4.5V) TYPICAL RDS(on) = 0.20 (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single ... See More ⇒

Detailed specifications: STS9NH3LL, STS9P2UH7, STSJ100NH3LL, STSJ100NHS3LL, STSJ25NF3LL, STSJ50NH3LL, STSJ60NH3LL, STT2PF60L, AON7506, STT3PF30L, STT4P3LLH6, STT4PF20V, STT5N2VH5, STT5PF20V, STT6N3LLH6, STT7P2UH7, STU10N60M2

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