STU11N65M5 Datasheet and Replacement
Type Designator: STU11N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: IPAK
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STU11N65M5 Datasheet (PDF)
stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTAB2VDSS @ RDS(on) 2 3Order codes ID 31TJmax max 132DPAKD2PAK 1STB11N65M5TO-220FPSTD11N65M5TABSTF11N65M5 710 V
std11n65m2 stp11n65m2 stu11n65m2.pdf
STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation
stu11nb60.pdf
STU11NB60N-CHANNEL 600V - 0.5 - 11A Max220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTU11NB60 600V
stu11nc60.pdf
STU11NC60N-CHANNEL 600V - 0.48 - 11A Max220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTU11NC60 600V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STB40N60M2 | DMNH10H028SCT | WML11N80M3 | STE40NK90ZD | UT2301Z | APT20M11JVFR | IRLS4030
Keywords - STU11N65M5 MOSFET datasheet
STU11N65M5 cross reference
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History: STB40N60M2 | DMNH10H028SCT | WML11N80M3 | STE40NK90ZD | UT2301Z | APT20M11JVFR | IRLS4030
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