STU11N65M5 Specs and Replacement

Type Designator: STU11N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: IPAK

STU11N65M5 substitution

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STU11N65M5 datasheet

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 stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf pdf_icon

STU11N65M5

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V ... See More ⇒

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 std11n65m2 stp11n65m2 stu11n65m2.pdf pdf_icon

STU11N65M5

STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 7 A 2 1 STU11N65M2 TO-220 TAB Extremely low gate charge Lower RDS(on) x area vs previous generation ... See More ⇒

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 stu11nb60.pdf pdf_icon

STU11N65M5

STU11NB60 N-CHANNEL 600V - 0.5 - 11A Max220 PowerMesh II MOSFET TYPE VDSS RDS(on) ID STU11NB60 600V ... See More ⇒

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 stu11nc60.pdf pdf_icon

STU11N65M5

STU11NC60 N-CHANNEL 600V - 0.48 - 11A Max220 PowerMesh II MOSFET TYPE VDSS RDS(on) ID STU11NC60 600V ... See More ⇒

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Detailed specifications: STT5N2VH5, STT5PF20V, STT6N3LLH6, STT7P2UH7, STU10N60M2, STU10NM65N, STU10P6F6, STU11N65M2, RFP50N06, STU12N60M2, STU13N60M2, STU13N65M2, STU13NM60N, STU16N60M2, STU16N65M2, STU1HN60K3, STU2LN60K3

Keywords - STU11N65M5 MOSFET specs

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