STU12N60M2 Specs and Replacement

Type Designator: STU12N60M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: IPAK

STU12N60M2 substitution

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STU12N60M2 datasheet

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 stu12n60m2.pdf pdf_icon

STU12N60M2

STU12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STU12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge 3 2 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAK Applications Switchi... See More ⇒

 7.1. Size:1040K  st
 std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf pdf_icon

STU12N60M2

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V ... See More ⇒

 9.1. Size:165K  samhop
 stu12l01.pdf pdf_icon

STU12N60M2

Green Product STU12L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 140 @ VGS=10V TO-252 Package. 100V 12A 245 @ VGS=4.5V G S STU SERIES ( ) TO - 252AA D- PAK C (TA=25 unless otherwise noted) A... See More ⇒

Detailed specifications: STT5PF20V, STT6N3LLH6, STT7P2UH7, STU10N60M2, STU10NM65N, STU10P6F6, STU11N65M2, STU11N65M5, SI2302, STU13N60M2, STU13N65M2, STU13NM60N, STU16N60M2, STU16N65M2, STU1HN60K3, STU2LN60K3, STU2N105K5

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