All MOSFET. STU80N4F6 Datasheet

 

STU80N4F6 Datasheet and Replacement


   Type Designator: STU80N4F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: IPAK
 

 STU80N4F6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

STU80N4F6 Datasheet (PDF)

 ..1. Size:1084K  st
 stu80n4f6.pdf pdf_icon

STU80N4F6

STU80N4F6N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTU80N4F6 40 V 6.3 m 80 ATAB Low gate charge3 Very low on-resistance21 High avalanche ruggednessIPAKApplications Switching applicationsFigure 1. Internal schematic diagramDescription

 9.1. Size:123K  samhop
 stu802s std802s.pdf pdf_icon

STU80N4F6

GreenProductSTU/D802SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.35 @ VGS=10V80V 25A TO-252 and TO-251 Package.50 @ VGS=4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-P

Datasheet: STU6N65K3 , STU6N65M2 , STU6N95K5 , STU7N105K5 , STU7N60M2 , STU7N65M2 , STU7N80K5 , STU7NF25 , IRF9640 , STU8N80K5 , STU95N4F3 , STU9HN65M2 , STU9N60M2 , STU9N65M2 , IRFR420APBF , IRFR420B , IRFR420PBF .

History: WMM240P10HG4 | HITK0204MP | FCB20N60F085 | STB9NK60ZD | VN1210N1 | SFG100N10GF | IRFHM8342

Keywords - STU80N4F6 MOSFET datasheet

 STU80N4F6 cross reference
 STU80N4F6 equivalent finder
 STU80N4F6 lookup
 STU80N4F6 substitution
 STU80N4F6 replacement

 

 
Back to Top

 


 
.