STU80N4F6 Specs and Replacement

Type Designator: STU80N4F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: IPAK

STU80N4F6 substitution

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STU80N4F6 datasheet

 ..1. Size:1084K  st
 stu80n4f6.pdf pdf_icon

STU80N4F6

STU80N4F6 N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STU80N4F6 40 V 6.3 m 80 A TAB Low gate charge 3 Very low on-resistance 2 1 High avalanche ruggedness IPAK Applications Switching applications Figure 1. Internal schematic diagram Description... See More ⇒

 9.1. Size:123K  samhop
 stu802s std802s.pdf pdf_icon

STU80N4F6

Green Product STU/D802S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 35 @ VGS=10V 80V 25A TO-252 and TO-251 Package. 50 @ VGS=4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-P... See More ⇒

Detailed specifications: STU6N65K3, STU6N65M2, STU6N95K5, STU7N105K5, STU7N60M2, STU7N65M2, STU7N80K5, STU7NF25, K2611, STU8N80K5, STU95N4F3, STU9HN65M2, STU9N60M2, STU9N65M2, IRFR420APBF, IRFR420B, IRFR420PBF

Keywords - STU80N4F6 MOSFET specs

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