All MOSFET. IRFR6215PBF Datasheet

 

IRFR6215PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR6215PBF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 66 nC

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.295 Ohm

Package: TO-252

IRFR6215PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR6215PBF Datasheet (PDF)

1.1. irfr6215pbf.pdf Size:241K _upd

IRFR6215PBF
IRFR6215PBF

PD-95080A IRFR6215PbF IRFU6215PbF HEXFET® Power MOSFET l P-Channel l 175°C Operating Temperature D l Surface Mount (IRFR6215) VDSS = -150V l Straight Lead (IRFU6215) l Advanced Process Technology RDS(on) = 0.295Ω l Fast Switching G l Fully Avalanche Rated ID = -13A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

2.1. irfr6215.pdf Size:141K _international_rectifier

IRFR6215PBF
IRFR6215PBF

PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel D 175C Operating Temperature VDSS = -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) = 0.295? Advanced Process Technology G Fast Switching ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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