All MOSFET. IRFR9120NPBF Datasheet

 

IRFR9120NPBF Datasheet and Replacement


   Type Designator: IRFR9120NPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-252
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IRFR9120NPBF Datasheet (PDF)

 ..1. Size:257K  international rectifier
 irfr9120npbf irfu9120npbf.pdf pdf_icon

IRFR9120NPBF

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 5.1. Size:117K  international rectifier
 irfr9120n.pdf pdf_icon

IRFR9120NPBF

PD - 9.1507AIRFR/U9120NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N)RDS(on) = 0.48 Advanced Process TechnologyG Fast SwitchingID = -6.6A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

 5.2. Size:911K  cn vbsemi
 irfr9120ntrpbf.pdf pdf_icon

IRFR9120NPBF

IRFR9120NTRPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switc

 6.1. Size:298K  1
 irfr9120 irfr9121 irfu9120 irfu9121.pdf pdf_icon

IRFR9120NPBF

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