IRFR9120NPBF Datasheet and Replacement
Type Designator: IRFR9120NPBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-252
IRFR9120NPBF substitution
IRFR9120NPBF Datasheet (PDF)
irfr9120npbf irfu9120npbf.pdf

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irfr9120n.pdf

PD - 9.1507AIRFR/U9120NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N)RDS(on) = 0.48 Advanced Process TechnologyG Fast SwitchingID = -6.6A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
irfr9120ntrpbf.pdf

IRFR9120NTRPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switc
Datasheet: IRFR5505PBF , IRFR6215PBF , IRFR9010PBF , IRFR9014PBF , IRFR9020PBF , IRFR9024NPBF , IRFR9024PBF , IRFR9110PBF , AON6414A , IRFR9120PBF , IRFR9210PBF , IRFR9214PBF , IRFR9220PBF , IRFR9310PBF , IRFR9N20DPBF , IRFS11N50APBF , IRFS17N20D .
History: SSPL5505
Keywords - IRFR9120NPBF MOSFET datasheet
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IRFR9120NPBF lookup
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IRFR9120NPBF replacement
History: SSPL5505



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