All MOSFET. IRFS3107PBF Datasheet

 

IRFS3107PBF Datasheet and Replacement


   Type Designator: IRFS3107PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 195 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-263
 

 IRFS3107PBF substitution

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IRFS3107PBF Datasheet (PDF)

 ..1. Size:371K  international rectifier
irfs3107pbf irfsl3107pbf.pdf pdf_icon

IRFS3107PBF

PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn

 ..2. Size:205K  inchange semiconductor
irfs3107pbf.pdf pdf_icon

IRFS3107PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS3107PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 6.1. Size:322K  international rectifier
irfs3107-7ppbf.pdf pdf_icon

IRFS3107PBF

IRFS3107-7PPbFHEXFET Power MOSFETApplications D VDSS 75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ. 2.1ml Uninterruptible Power Supply max. 2.6ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID 260ASID (Package Limited) 240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized C

 6.2. Size:694K  infineon
auirfs3107-7p.pdf pdf_icon

IRFS3107PBF

AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - IRFS3107PBF MOSFET datasheet

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