All MOSFET. IRFS38N20DPBF Datasheet

 

IRFS38N20DPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS38N20DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-263

 IRFS38N20DPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS38N20DPBF Datasheet (PDF)

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