All MOSFET. IXFK34N80 Datasheet

 

IXFK34N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFK34N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 270 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 920 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO264

 IXFK34N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK34N80 Datasheet (PDF)

 ..1. Size:48K  ixys
 ixfk34n80 ixfx34n80.pdf

IXFK34N80 IXFK34N80

HiPerFETTM IXFK 34N80 VDSS = 800 VIXFX 34N80 ID25 = 34 APower MOSFETsRDS(on) = 0.24 WSingle MOSFET Dietrr 250 nsAvalanche RatedPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C34 ATO-264 AA (I

 9.1. Size:38K  ixys
 ixfk33n50 ixfk35n50.pdf

IXFK34N80 IXFK34N80

VDSS ID25 RDS(on)HiPerFETTMIXFK33N50 500 V 33 A 0.16 WPower MOSFETsIXFK35N50 500 V 35 A 0.15 WN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrPreliminary dataTO-264 AASymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VGVGS Continuous 20 V D (TAB)DSVGSM Transient 30 VID

 9.2. Size:161K  ixys
 ixfk32n80p ixfx32n80p.pdf

IXFK34N80 IXFK34N80

IXFK 32N80P VDSS = 800 VPolarHVTM HiPerFETIXFX 32N80P ID25 = 32 APower MOSFET RDS(on) 270 m N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RGS = 1 M 800 VVGSS Contin

 9.3. Size:192K  ixys
 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf

IXFK34N80 IXFK34N80

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 9.4. Size:123K  ixys
 ixfk30n50q ixfx30n50q.pdf

IXFK34N80 IXFK34N80

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 30N50Q500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS

 9.5. Size:573K  ixys
 ixfk32n50q ixfx32n50q.pdf

IXFK34N80 IXFK34N80

VDSS ID25 RDS(on)IXFK 32N50QHiPerFETTMIXFX 32N50Q500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M

 9.6. Size:268K  ixys
 ixfh36n60p ixft36n60p ixfk36n60p.pdf

IXFK34N80 IXFK34N80

IXFH 36N60P VDSS = 600 VPolarHVTM HiPerFETIXFK 36N60P ID25 = 36 APower MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

 9.7. Size:124K  ixys
 ixfk32n90p ixfx32n90p.pdf

IXFK34N80 IXFK34N80

Advance Technical InformationPolarTM HiPerFETTM VDSS = 900VIXFK32N90PPower MOSFETsID25 = 32AIXFX32N90PRDS(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top