IXFK34N80 PDF and Equivalents Search

 

IXFK34N80 Specs and Replacement

Type Designator: IXFK34N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO264

IXFK34N80 substitution

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IXFK34N80 datasheet

 ..1. Size:48K  ixys
ixfk34n80 ixfx34n80.pdf pdf_icon

IXFK34N80

HiPerFETTM IXFK 34N80 VDSS = 800 V IXFX 34N80 ID25 = 34 A Power MOSFETs RDS(on) = 0.24 W Single MOSFET Die trr 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C34 A TO-264 AA (I... See More ⇒

 9.1. Size:38K  ixys
ixfk33n50 ixfk35n50.pdf pdf_icon

IXFK34N80

VDSS ID25 RDS(on) HiPerFETTM IXFK33N50 500 V 33 A 0.16 W Power MOSFETs IXFK35N50 500 V 35 A 0.15 W N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Preliminary data TO-264 AA Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V G VGS Continuous 20 V D (TAB) D S VGSM Transient 30 V ID... See More ⇒

 9.2. Size:161K  ixys
ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFK34N80

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin... See More ⇒

 9.3. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFK34N80

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒

Detailed specifications: IXFK180N10, IXFK20N80Q, IXFK26N60Q, IXFK26N90, IXFK27N80, IXFK32N50Q, IXFK32N60, IXFK33N50, IRLB4132, IXFK35N50, IXFK36N60, IXFK44N50, IXFK44N60, IXFK48N50, IXFK48N50Q, IXFK50N50, IXFK52N30Q

Keywords - IXFK34N80 MOSFET specs

 IXFK34N80 cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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