IXFK44N50 MOSFET Datasheet: N-Ch, 500V, 44A. Full specification with pinout and replacement list

IXFK44N50 Specs and Replacement

Type Designator: IXFK44N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO264

IXFK44N50 substitution

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IXFK44N50 datasheet

..1. Size:162K ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒

..2. Size:108K ixys
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf pdf_icon

0.1. Size:296K ixys
ixfh44n50p ixfk44n50p ixft44n50p.pdf pdf_icon

IXFH 44N50P VDSS = 500 V PolarHVTM HiPerFET IXFK 44N50P ID25 = 44 A Power MOSFET IXFT 44N50P RDS(on) 140 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M 500 ... See More ⇒

0.2. Size:126K ixys
ixfx44n50f ixfk44n50f.pdf pdf_icon

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F RDS(on) 120m F-Class MegaHertz Switching trr 250ns Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C ... See More ⇒