All MOSFET. STB120NF10T4 Datasheet

 

STB120NF10T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB120NF10T4
   Marking Code: B120NF10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 172 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 785 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: D2PAK

 STB120NF10T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB120NF10T4 Datasheet (PDF)

 ..1. Size:940K  st
stb120nf10t4.pdf

STB120NF10T4 STB120NF10T4

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 ..2. Size:1031K  st
stb120nf10t4 stp120nf10 stw120nf10.pdf

STB120NF10T4 STB120NF10T4

STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TABFeatures Order code V R max. I DS DS(on) DSTB120NF10T4 STP120NF10 100 V 10.5 m 110 A D2PAKTAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3

 4.1. Size:940K  st
stp120nf10 stb120nf10 stf120nf10 stw120nf10.pdf

STB120NF10T4 STB120NF10T4

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 4.2. Size:940K  st
stp120nf10 stb120nf10.pdf

STB120NF10T4 STB120NF10T4

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 4.3. Size:390K  st
stw120nf10 stp120nf10 stb120nf10.pdf

STB120NF10T4 STB120NF10T4

STP120NF10 - STB120NF10STW120NF10N-channel 100V - 0.009 - 110A - TO-247 - TO-220 - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTW120NF10 100V

 4.4. Size:858K  cn vbsemi
stb120nf10.pdf

STB120NF10T4 STB120NF10T4

STB120NF10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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