All MOSFET. STB130NS04ZBT4 Datasheet

 

STB130NS04ZBT4 Datasheet and Replacement


   Type Designator: STB130NS04ZBT4
   Marking Code: B130NS04ZB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: D2PAK
 

 STB130NS04ZBT4 substitution

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STB130NS04ZBT4 Datasheet (PDF)

 ..1. Size:396K  st
 stb130ns04zbt4.pdf pdf_icon

STB130NS04ZBT4

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

 2.1. Size:515K  st
 stb130ns04zb-1.pdf pdf_icon

STB130NS04ZBT4

STB130NS04ZB-1Automotive-grade N-channel clamped, 7 m typ., 80 A fullyprotected Mesh overlay Power MOSFET in a I2PAK packageDatasheet - production dataFeaturesTABRDS(on) Type VDS IDmax.STB130NS04ZB-1 Clamped 9 m 80 A Designed for automotive applications and AEC-Q101 qualified321 100% avalanche tested Low capacitance and gate chargeI2PAK 1

 2.2. Size:397K  st
 stp130ns04zb stb130ns04zb stw130ns04zb stb130ns04zb-1.pdf pdf_icon

STB130NS04ZBT4

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

 7.1. Size:410K  st
 stb130nh02l.pdf pdf_icon

STB130NS04ZBT4

STB130NH02LN-CHANNEL 24V - 0.0034 - 120A DPAKSTripFET III POWER MOSFET FOR DC-DC CONVERSIONTYPE VDSS RDS(on) IDSTB130NH02L 24 V

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Keywords - STB130NS04ZBT4 MOSFET datasheet

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