STB130NS04ZBT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB130NS04ZBT4
Marking Code: B130NS04ZB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: D2PAK
STB130NS04ZBT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB130NS04ZBT4 Datasheet (PDF)
stb130ns04zbt4.pdf
STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped
stb130ns04zb-1.pdf
STB130NS04ZB-1Automotive-grade N-channel clamped, 7 m typ., 80 A fullyprotected Mesh overlay Power MOSFET in a I2PAK packageDatasheet - production dataFeaturesTABRDS(on) Type VDS IDmax.STB130NS04ZB-1 Clamped 9 m 80 A Designed for automotive applications and AEC-Q101 qualified321 100% avalanche tested Low capacitance and gate chargeI2PAK 1
stp130ns04zb stb130ns04zb stw130ns04zb stb130ns04zb-1.pdf
STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped
stb130nh02l.pdf
STB130NH02LN-CHANNEL 24V - 0.0034 - 120A DPAKSTripFET III POWER MOSFET FOR DC-DC CONVERSIONTYPE VDSS RDS(on) IDSTB130NH02L 24 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
