All MOSFET. STB13N80K5 Datasheet

 

STB13N80K5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB13N80K5
   Marking Code: 13N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: D2PAK

 STB13N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB13N80K5 Datasheet (PDF)

 ..1. Size:1760K  st
 stb13n80k5 stf13n80k5 stp13n80k5 stw13n80k5.pdf

STB13N80K5 STB13N80K5

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 PowerMOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on) ID PTOT31STB13N80K5 190 W3D2PAK21STF13N80K5 35 WTO-220FP800 V 0.45 12 ATABSTP13N80K5190 WSTW13N80K5 Worldwide best FOM (figur

 8.1. Size:489K  st
 stb13nk60zt4 stp13nk60z stp13nk60zfp stw13nk60z.pdf

STB13N80K5 STB13N80K5

STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V

 8.2. Size:491K  st
 stb13nk60zt4 stw13nk60z stp13nk60zfp.pdf

STB13N80K5 STB13N80K5

STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V

 8.3. Size:1154K  st
 stb13nm60n std13nm60n.pdf

STB13N80K5 STB13N80K5

STB13NM60N, STD13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in DPAK and DPAK packagesDatasheet production dataFeatures Order code VDS (@Tjmax) RDS(on) max IDSTB13NM60NTAB650 V 0.36 11 ATABSTD13NM60N3 100% avalanche tested31 1 Low input capacitance and gate chargeDPAKDPAK Low gate input resistanceApplications

 8.4. Size:1515K  st
 stb13n60m2 std13n60m2.pdf

STB13N80K5 STB13N80K5

STB13N60M2, STD13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTB13N60M2TAB650 V 0.38 11 ASTD13N60M2TAB33 Extremely low gate charge11 Lower RDS(on) x area vs previous generationDPAKD2PAK Low gate input resistance

 8.5. Size:578K  st
 stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STB13N80K5 STB13N80K5

STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N

 8.6. Size:577K  st
 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STB13N80K5 STB13N80K5

STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N

 8.7. Size:1276K  st
 stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf

STB13N80K5 STB13N80K5

STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: WMB048NV6LG4 | WMB119N10LG2

 

 
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