STB14NK60Z-1 MOSFET Datasheet: N-Ch, 600V, 13.5A. Full specification with pinout and replacement list

STB14NK60Z-1 Specs and Replacement

Type Designator: STB14NK60Z-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: I2PAK

STB14NK60Z-1 substitution

- MOSFET ⓘ Cross-Reference Search

STB14NK60Z-1 datasheet

..1. Size:621K st
stp14nk60z stp14nk60zfp stb14nk60z stb14nk60z-1 stw14nk60z.pdf pdf_icon

STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45 - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS(on) ID Pw 3 STP14NK60Z 600V ... See More ⇒

..2. Size:620K st
stb14nk60z-1.pdf pdf_icon

4.1. Size:616K st
stb14nk60zt4 stp14nk60zfp stw14nk60z.pdf pdf_icon

4.2. Size:975K st
stb14nk60zt4 stp14nk60zfp.pdf pdf_icon

STB14NK60ZT4, STP14NK60ZFP N-channel 600 V, 0.45 typ.,13.5 A SuperMESH Power MOSFETs in D2PAK and TO-220FP packages Datasheet - production data Features RDS(on) Order codes VDS max. ID PTOT TAB STB14NK60ZT4 160 W 600 V 0.5 13.5 A 3 1 STP14NK60ZFP 40 W 3 2 1 D2PAK Extremely high dv/dt capability TO-220FP 100% avalanche tested Gate charge minimized ... See More ⇒