STB20NM50-1 Specs and Replacement

Type Designator: STB20NM50-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: I2PAK

STB20NM50-1 substitution

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STB20NM50-1 datasheet

 ..1. Size:313K  st
 stb20nm50-1 stb20nm50 stb20nm50t4 stp20nm50fp.pdf pdf_icon

STB20NM50-1

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V ... See More ⇒

 ..2. Size:315K  st
 stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf pdf_icon

STB20NM50-1

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V ... See More ⇒

 5.1. Size:401K  st
 stb20nm50fd stf20nm50fd stp20nm50fd.pdf pdf_icon

STB20NM50-1

STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220 FDmesh Power MOSFET (with fast diode) Features RDS(on) Type VDSS RDS(on)* Qg ID max STB20NM50FD 500 V ... See More ⇒

 5.2. Size:396K  st
 stb20nm50fdt4.pdf pdf_icon

STB20NM50-1

STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220 FDmesh Power MOSFET (with fast diode) Features RDS(on) Type VDSS RDS(on)* Qg ID max STB20NM50FD 500 V ... See More ⇒

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Detailed specifications: STB200NF04-1, STB200NF04L, STB200NF04L-1, STB200NF04T4, STB20N65M5, STB20N95K5, STB20NK50ZT4, STB20NM50, IRLB4132, STB20NM50FDT4, STB20NM50T4, STB20NM60-1, STB20NM60T4, STB21N90K5, STB21NM50N, STB21NM50N-1, STB21NM60N

Keywords - STB20NM50-1 MOSFET specs

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