IXFK55N50 MOSFET Datasheet: N-Ch, 500V, 55A. Full specification with pinout and replacement list

IXFK55N50 Specs and Replacement

Type Designator: IXFK55N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1280 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO264

IXFK55N50 substitution

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IXFK55N50 datasheet

..1. Size:577K ixys
ixfk55n50 ixfx55n50 ixfn55n50.pdf pdf_icon

VDSS = 500 V IXFK 55N50 HiPerFETTM ID25 = 55 A IXFX 55N50 Power MOSFET RDS(on) = 90m IXFN 55N50 250 ns trr Single Die MOSFET Symbol Test Conditions Maximum Ratings PLUS247(IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C 500 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) G C ID25 TC = 25 C55 A E IDM TC = 2... See More ⇒

..2. Size:121K ixys
ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf pdf_icon

VDSS ID25 RDS(on) trr HiPerFETTM Power MOSFET IXFN 55N50 500V 55A 80m 250ns IXFN 50N50 500V 50A 100m 250ns IXFK 55N50 500V 55A 80m 250ns Single Die MOSFET IXFK 50N50 500V 50A 100m 250ns Preliminary data sheet TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFN IXFK IXFK IXFN 55N50 50N50 55N50 50N50 VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C to 150 C... See More ⇒

9.1. Size:178K ixys
ixfk520n075t2 ixfx520n075t2.pdf pdf_icon

Advance Technical Information TrenchT2TM GigaMOSTM VDSS = 75V IXFK520N075T2 HiperFETTM ID25 = 520A IXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C75 V Tab D S VDGR TJ = 25 C to 175 C, RGS = 1M 75 V V... See More ⇒

9.2. Size:70K ixys
ixfh52n30q ixfk52n30q ixft52n30q.pdf pdf_icon

IXFH 52N30Q HiPerFETTM VDSS = 300 V IXFK 52N30Q Power MOSFETs ID25 = 52 A IXFT 52N30Q Q-Class RDS(on) = 60 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuo... See More ⇒