All MOSFET. IXFK55N50 Datasheet

 

IXFK55N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFK55N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 330 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO264

 IXFK55N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK55N50 Datasheet (PDF)

 ..1. Size:577K  ixys
 ixfk55n50 ixfx55n50 ixfn55n50.pdf

IXFK55N50 IXFK55N50

VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2

 ..2. Size:121K  ixys
 ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf

IXFK55N50 IXFK55N50

VDSS ID25 RDS(on) trrHiPerFETTMPower MOSFET IXFN 55N50 500V 55A 80m 250nsIXFN 50N50 500V 50A 100m 250nsIXFK 55N50 500V 55A 80m 250nsSingle Die MOSFETIXFK 50N50 500V 50A 100m 250nsPreliminary data sheetTO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings IXFNIXFK IXFK IXFN55N50 50N50 55N50 50N50VDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C to 150C

 9.1. Size:178K  ixys
 ixfk520n075t2 ixfx520n075t2.pdf

IXFK55N50 IXFK55N50

Advance Technical InformationTrenchT2TM GigaMOSTMVDSS = 75VIXFK520N075T2HiperFETTMID25 = 520AIXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C75 V TabDSVDGR TJ = 25C to 175C, RGS = 1M 75 VV

 9.2. Size:70K  ixys
 ixfh52n30q ixfk52n30q ixft52n30q.pdf

IXFK55N50 IXFK55N50

IXFH 52N30QHiPerFETTMVDSS = 300 VIXFK 52N30QPower MOSFETs ID25 = 52 AIXFT 52N30QQ-Class RDS(on) = 60 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuo

 9.3. Size:294K  ixys
 ixft50n85xhv ixfh50n85x ixfk50n85x.pdf

IXFK55N50 IXFK55N50

X-Class HiPerFETTM VDSS = 850VIXFT50N85XHVPower MOSFET ID25 = 50AIXFH50N85X RDS(on) 105m IXFK50N85XTO-268HV (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeS D (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Co

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History: STT03N10

 

 
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