All MOSFET. STB24N60DM2 Datasheet

 

STB24N60DM2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB24N60DM2
   Marking Code: 24N60DM2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 8.7 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: D2PAK

 STB24N60DM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB24N60DM2 Datasheet (PDF)

 ..1. Size:1195K  st
 stb24n60dm2 stp24n60dm2 stw24n60dm2.pdf

STB24N60DM2 STB24N60DM2

STB24N60DM2, STP24N60DM2, STW24N60DM2N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB TABVDS @ RDS(on) 2Order codes ID3 TJmax max13STB24N60DM2D2PAK21STP24N60DM2 650 V 0.20 18 ATO-220STW24N60DM2 Extremely low gate charge and input capacitance32

 6.1. Size:1556K  st
 stb24n60m2 sti24n60m2 stp24n60m2 stw24n60m2.pdf

STB24N60DM2 STB24N60DM2

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID231STB24N60M2321D2PAKSTI24N60M2I2PAK650 V 0.19 18 ASTP24N60M2TABSTW24N60M2 Extremely low gate charge

 7.1. Size:1178K  st
 stb24n65m2 stf24n65m2 stp24n65m2.pdf

STB24N60DM2 STB24N60DM2

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) DSTB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze

 8.1. Size:419K  st
 stb24nf10 stp24nf10.pdf

STB24N60DM2 STB24N60DM2

STB24NF10STP24NF10N-channel 100V - 0.0055 - 26A - TO-220 - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB24NF10 100V

 8.2. Size:878K  st
 stb24nm60n.pdf

STB24N60DM2 STB24N60DM2

STB24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETDPAKFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STB24NM60N 650 V

 8.3. Size:556K  st
 stb24nm65n sti24nm65n stf24nm65n stp24nm65n stw24nm65n.pdf

STB24N60DM2 STB24N60DM2

STW24NM65N-STI24NM65N-STF24NM65NSTB24NM65N - STP24NM65NN-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAKI2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) max ID(@TJmax)323121STB24NM65N 710 V

 8.4. Size:444K  st
 stp24nf10 stb24nf10.pdf

STB24N60DM2 STB24N60DM2

STP24NF10STB24NF10N-CHANNEL 100V - 0.055 - 26A TO-220 / D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP24NF10 100 V

 8.5. Size:203K  inchange semiconductor
 stb24nm60n.pdf

STB24N60DM2 STB24N60DM2

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB24NM60NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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