STB27NM60ND MOSFET. Datasheet pdf. Equivalent
Type Designator: STB27NM60ND
Marking Code: 27NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: D2PAK
STB27NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB27NM60ND Datasheet (PDF)
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STB27NM60ND, STW27NM60NDAutomotive-grade N-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeatures Order codes VDS@ Tjmax RDS(on) max IDSTB27NM60NDTAB650 V 0.16 21 ASTW27NM60ND Designed for automotive applications and 3 321AEC-Q101 qualified1D2PAK The worldwide best RDS
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STB27NM60NDSTW27NM60NDN-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFET(with fast diode) in D2PAK, TO-247FeaturesVDSS @Type RDS(on) max IDTJMAXTABSTB27NM60ND 21 A650 V 0.16 STW27NM60ND 21 A3 3 The worldwide best RDS(on)*area amongst the 211fast recovery diode devicesD2PAKTO-247 100% avalanche tested Low input capacitance and gate charge
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STB270N04STB270N04-1 - STP270N04N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N04-1 40V
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STB270N4F3STI270N4F3N-channel 40 V, 1.6 m, 160 A, D2PAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB270N4F3 40 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NCE50NF180D
