STB30NF10T4 PDF and Equivalents Search

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 stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf

STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V ... See More ⇒

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 stb30nf10.pdf

STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB30NF10 100 V ... See More ⇒

 5.2. Size:502K  st
 stb30nf10 stp30nf10 stp30nf10fp.pdf

STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V ... See More ⇒

 7.1. Size:386K  st
 stp30nf20 stb30nf20 stw30nf20.pdf

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me... See More ⇒

 7.2. Size:847K  st
 stb30nf20l.pdf

STB30NF20L N-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK package Datasheet production data Features Order code VDSS RDS(on) ID PTOT STB30NF20L 200 V 0.075 30 A 150 W TAB Gate charge minimized 100% avalanche tested 3 Excellent figure of merit (RDS* Qg) 1 Very good manufacturing repeatability D PAK Very low intrinsic capacitance App... See More ⇒

 7.3. Size:393K  st
 stp30nf20 stw30nf20 stb30nf20.pdf

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me... See More ⇒

 7.4. Size:355K  inchange semiconductor
 stb30nf20.pdf

isc N-Channel MOSFET Transistor STB30NF20 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒