STB31N65M5 Specs and Replacement

Type Designator: STB31N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.148 Ohm

Package: D2PAK

STB31N65M5 substitution

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STB31N65M5 datasheet

 ..1. Size:1126K  st
stb31n65m5 stf31n65m5 stp31n65m5 stw31n65m5.pdf pdf_icon

STB31N65M5

STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet N-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO 220FP, TO 220 and TO-247 packages Features TAB VDS @ TJMAX RDS(on ) max. ID Order code Package 3 1 3 2 STB31N65M5 D2PAK D PAK 2 1 TO-220FP STF31N65M5 TO-220FP TAB 710 V 0.148 22 A STP31N65M5 TO-220 STW31N65M5 TO-247 3 3 2 TO-220 2 TO-24... See More ⇒

 ..2. Size:1658K  st
stb31n65m5 stf31n65m5 stfi31n65m5 stp31n65m5 stw31n65m5.pdf pdf_icon

STB31N65M5

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ TJmax RDS(on) max ID 2 3 1 STB31N65M5 3 TAB 2 D2PAK 1 STF31N65M5 TO-220FP STFI31N65M5 710 V ... See More ⇒

 ..3. Size:258K  inchange semiconductor
stb31n65m5.pdf pdf_icon

STB31N65M5

Isc N-Channel MOSFET Transistor STB31N65M5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 9.1. Size:135K  samhop
stb31l01.pdf pdf_icon

STB31N65M5

Gre r r P Pr Pr Pro STB31L01 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 26A 49 @ VGS=10V TO-263 Package. STB SERIES TO-263(DD-PAK) (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS ... See More ⇒

Detailed specifications: STB27NM60ND, STB28N60M2, STB28N65M2, STB28NM60ND, STB2N62K3, STB30NF10T4, STB30NF20L, STB30NM60N, 10N65, STB32NM50N, STB33N60M2, STB33N65M2, STB34N65M5, STB34NM60N, STB35NF10T4, STB36NF06LT4, STB36NM60ND

Keywords - STB31N65M5 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.