STB32NM50N MOSFET. Datasheet pdf. Equivalent
Type Designator: STB32NM50N
Marking Code: 32NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 62.5 nC
Rise Time (tr): 9.5 nS
Drain-Source Capacitance (Cd): 179 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: D2PAK
STB32NM50N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB32NM50N Datasheet (PDF)
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STB32NM50N, STF32NM50N,STP32NM50N, STW32NM50NN-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDS ID PTOT2max.3132STB32NM50N 190 W1DPAKTO-220FPSTF32NM50N 35 W500 V 0.13 22 ASTP32NM50N 190 WTABSTW32NM50N 190 W 100% avalanche t
stb32nm50n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB32NM50NDESCRIPTIONDrain Current: I = 22A@ T =25D CDrain Source Voltage: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER VALUE UNITV Dr
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