STB32NM50N Specs and Replacement
Type Designator: STB32NM50N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 179 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: D2PAK
STB32NM50N substitution
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STB32NM50N datasheet
stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in D PAK, TO-220FP, TO-220, TO-247 packages Datasheet production data Features TAB RDS(on) Order codes VDS ID PTOT 2 max. 3 1 3 2 STB32NM50N 190 W 1 D PAK TO-220FP STF32NM50N 35 W 500 V 0.13 22 A STP32NM50N 190 W TAB STW32NM50N 190 W 100% avalanche t... See More ⇒
stb32nm50n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STB32NM50N DESCRIPTION Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf
STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V ... See More ⇒
Detailed specifications: STB28N60M2, STB28N65M2, STB28NM60ND, STB2N62K3, STB30NF10T4, STB30NF20L, STB30NM60N, STB31N65M5, 5N60, STB33N60M2, STB33N65M2, STB34N65M5, STB34NM60N, STB35NF10T4, STB36NF06LT4, STB36NM60ND, STB38N65M5
Keywords - STB32NM50N MOSFET specs
STB32NM50N cross reference
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STB32NM50N replacement
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