STB36NF06LT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB36NF06LT4
Marking Code: B36NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: D2PAK
STB36NF06LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB36NF06LT4 Datasheet (PDF)
stb36nf06lt4.pdf
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stb36nm60nd stw36nm60nd.pdf
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stb36nm60n.pdf
STB36NM60NAutomotive-grade N-channel 600 V, 0.093 , 29 A, MDmesh II Power MOSFET in a DPAK packageDatasheet production dataFeatures VDS @RDS(on) Order code ID PTOTTABTJmax max.STB36NM60N 650 V 0.105 29 A 210 W Designed for automotive applications and 3AEC-Q101 qualified1 100% avalanche tested2D PAK Low input capacitance and gate charge
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
