STB36NM60ND MOSFET. Datasheet pdf. Equivalent
Type Designator: STB36NM60ND
Marking Code: 36NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 29 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80.4 nC
Rise Time (tr): 53.4 nS
Drain-Source Capacitance (Cd): 168 pF
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: D2PAK
STB36NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB36NM60ND Datasheet (PDF)
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