STB36NM60ND MOSFET. Datasheet pdf. Equivalent

   Type Designator: STB36NM60ND
   Marking Code: 36NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80.4 nC
   trⓘ - Rise Time: 53.4 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: D2PAK

STB36NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STB36NM60ND Datasheet (PDF)

..1. Size:1353K st
stb36nm60nd stw36nm60nd.pdf

STB36NM60ND, STW36NM60NDAutomotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeaturesVDSS @TJ RDS(on) Order codes IDmax. max.TABSTB36NM60ND650 V 0.110 29 ASTW36NM60ND3 Designed for automotive applications and 1 32 AEC-Q101 qualified1 100% avalanche t

4.1. Size:1040K st
stb36nm60n.pdf

STB36NM60NAutomotive-grade N-channel 600 V, 0.093 , 29 A, MDmesh II Power MOSFET in a DPAK packageDatasheet production dataFeatures VDS @RDS(on) Order code ID PTOTTABTJmax max.STB36NM60N 650 V 0.105 29 A 210 W Designed for automotive applications and 3AEC-Q101 qualified1 100% avalanche tested2D PAK Low input capacitance and gate charge

8.1. Size:444K st
stp36nf06l stb36nf06l.pdf