STB45NF06T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB45NF06T4
Marking Code: B45NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: D2PAK
STB45NF06T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB45NF06T4 Datasheet (PDF)
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stb45n30m5.pdf
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stb45n65m5.pdf
isc N-Channel MOSFET Transistor STB45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .