IXFK90N20Q MOSFET Datasheet: N-Ch, 200V, 90A. Full specification with pinout and replacement list

IXFK90N20Q Specs and Replacement

Type Designator: IXFK90N20Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 1620 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO264

IXFK90N20Q substitution

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IXFK90N20Q datasheet

..1. Size:52K ixys
ixfx90n20q ixfk90n20q.pdf pdf_icon

HiPerFETTM IXFX 90N20Q VDSS = 200 V IXFK 90N20Q ID25 = 90 A Power MOSFETs RDS(on) = 22 m Q-CLASS Single MOSFET Die trr s 200 N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 ... See More ⇒

5.1. Size:111K ixys
ixfk90n20 ixfn100n20 ixfn106n20.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t... See More ⇒

7.1. Size:197K ixys
ixfk90n60x ixfx90n60x.pdf pdf_icon

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFK90N60X Power MOSFET ID25 = 90A IXFX90N60X RDS(on) 38m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S VGSS ... See More ⇒

7.2. Size:125K ixys
ixfx90n30 ixfk90n30.pdf pdf_icon

IXFX 90N30 VDSS = 300 V HiPerFETTM IXFK 90N30 ID25 = 90 A Power MOSFETs RDS(on) = 33 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capabi... See More ⇒

Detailed specifications: IXFK52N30Q , IXFK55N50 , IXFK60N25Q , IXFK72N20 , IXFK73N30 , IXFK80N20 , IXFK80N20Q , IXFK90N20 , CS150N03A8 , IXFK90N30 , IXFM10N100 , IXFM10N90 , IXFM11N80 , IXFM12N100 , IXFM12N90 , IXFM12N90Q , IXFM13N50 .