All MOSFET. STB75NH02LT4 Datasheet

 

STB75NH02LT4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB75NH02LT4
   Marking Code: B75NH02L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 545 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: D2PAK

 STB75NH02LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB75NH02LT4 Datasheet (PDF)

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