STB80NF55L-08 Specs and Replacement

Type Designator: STB80NF55L-08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 145 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: D2PAK

STB80NF55L-08 substitution

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STB80NF55L-08 datasheet

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 stb80nf55l-08.pdf pdf_icon

STB80NF55L-08

STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESC... See More ⇒

 ..2. Size:195K  st
 stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf pdf_icon

STB80NF55L-08

STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESC... See More ⇒

 2.1. Size:399K  st
 stb80nf55l-06 stp80nf55l-06.pdf pdf_icon

STB80NF55L-08

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STB80NF55L-08

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Detailed specifications: STB80NE03L-06T4, STB80NF03L-04-1, STB80NF06, STB80NF10T4, STB80NF55-06-1, STB80NF55-06T, STB80NF55-06T4, STB80NF55-08-1, IRFP250N, STB80PF55T4, STB85NF3LLT4, STB85NF55L, STB85NF55LT4, STB85NF55T4, STB85NS04Z, STB8NM60N, STB8NM60T4

Keywords - STB80NF55L-08 MOSFET specs

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