All MOSFET. STB85NS04Z Datasheet

 

STB85NS04Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB85NS04Z
   Marking Code: B85NS04Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: D2PAK

 STB85NS04Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB85NS04Z Datasheet (PDF)

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